F1220
Polyfet RF Devices
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Rf power vdmos transistor. Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and P
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F1221 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F1222 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F1224D-1W - DC/DC CONVERTER
(REICU)
DC/DC CONVERTER
F****S/D-1W(R2) Series
3000VDC Isolated 1W Single Output SIP/DIP-Package
Features
RoHS pliant Efficiency up to 80%
3kVDC Isolatio.
F1224S-1W - DC/DC CONVERTER
(REICU)
DC/DC CONVERTER
F****S/D-1W(R2) Series
3000VDC Isolated 1W Single Output SIP/DIP-Package
Features
RoHS pliant Efficiency up to 80%
3kVDC Isolatio.
F1224S-2WR2 - DC/DC Converter
(MORNSUN)
DC/DC Converter
E_S-2WR2 & F_S-2WR2 series
2W, Fixed input voltage, isolated & unregulated dual /single output
FEATURES
z Continuous short-circuit pr.
F12-25R12KT4G - IGBT
(Infineon)
Technische Information / Technical Information
IGBT-Module IGBT-modules
F12-25R12KT4G
EconoPACK™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Cont.
F1200A - Fast Efficient Rectifier Diodes
(Diotec)
F1200A F1200G
F1200A F1200G Fast Efficient Rectifier Diodes Schnelle Gleichrichterdioden für hohen Wirkungsgrad
IFAV = 12 A VF1 < 0.82 V Tjm.
F1200A - High efficiency fast silicion rectifier diode
(Semikron)
F 1200A F 1200G
Axial leaded diode
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5 -7 5 -@ 5 -2 5 -A
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F1200A - FAST RECOVERY RECTIFIER DIODES
(EIC)
Certificate TH97/10561QM
Certificate TW00/17276EM
F1200A, F1200D
FAST RECOVERY RECTIFIER DIODES
PRV : 50 - 200 Volts Io : 12 Amperes
D6
FEATURES.
F1200B - Fast Efficient Rectifier Diodes
(Diotec)
F1200A F1200G
F1200A F1200G Fast Efficient Rectifier Diodes Schnelle Gleichrichterdioden für hohen Wirkungsgrad
IFAV = 12 A VF1 < 0.82 V Tjm.