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F1207 - RF POWER VDMOS TRANSISTOR

F1207 Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

F1207 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1207 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R

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Datasheet Details

Part number
F1207
Manufacturer
Polyfet RF Devices
File Size
38.00 KB
Datasheet
F1207_PolyfetRFDevices.pdf
Description
RF POWER VDMOS TRANSISTOR

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