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F1209 - RF POWER VDMOS TRANSISTOR

F1209 Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

F1209 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1209 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Push - Pull Package Style AD HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R

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Datasheet Details

Part number
F1209
Manufacturer
Polyfet RF Devices
File Size
36.79 KB
Datasheet
F1209_PolyfetRFDevices.pdf
Description
RF POWER VDMOS TRANSISTOR

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POWER VDMOS TRANSISTOR Polyfet RF Devices
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