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F2247 Datasheet - Polyfet RF Devices

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F2247 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2247 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 4 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R

F2247 Datasheet (33.58 KB)

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Datasheet Details

Part number:

F2247

Manufacturer:

Polyfet RF Devices

File Size:

33.58 KB

Description:

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.

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F2247 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices

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