F2201 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

📥 Download Datasheet

F2201 Datasheet Preview — Preview of F2201 PDF

Datasheet Specifications

Part number: F2201
Manufacturer: Polyfet RF Devices
File Size: 35.79 KB
Datasheet: F2201_PolyfetRFDevices.pdf
Description: PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2201 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 2 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R

F2201 Distributors

📁 Related Datasheet

F2250 F2250NLGK F2250NLGK8 F2251 F2255 F2255NLGK

📌 All Tags

F2201 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices

Polyfet RF Devices F2201-like datasheet