Part number:
F2201
Manufacturer:
Polyfet RF Devices
File Size:
35.79 KB
Description:
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2201 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 2 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R
F2201
Polyfet RF Devices
35.79 KB
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
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