Part number:
F2212
Manufacturer:
Polyfet RF Devices
File Size:
35.84 KB
Description:
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2212 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 8 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R
F2212
Polyfet RF Devices
35.84 KB
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
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