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F2212 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F2212 Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

F2212 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2212 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 8 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R

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Datasheet Details

Part number
F2212
Manufacturer
Polyfet RF Devices
File Size
35.84 KB
Datasheet
F2212_PolyfetRFDevices.pdf
Description
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices
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F2212 Stock/Price