F2213 Datasheet, Transistor, Polyfet RF Devices

F2213 Features

• Transistor gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2213 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS

PDF File Details

Part number:

F2213

Manufacturer:

Polyfet RF Devices

File Size:

36.08kb

Download:

📄 Datasheet

Description:

Patented gold metalized silicon gate enhancement mode rf power vdmos transistor. Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and P

F2213 Application

• Applications Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" pr

TAGS

📁 Related Datasheet

F2211 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2212 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2201 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2202 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2246 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2247 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2248 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)
polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .

F2250 - Voltage Variable RF Attenuator (Renesas)
Voltage Variable RF Attenuator GENERAL DESCRIPTION The F2250 is a low insertion loss Voltage Variable RF Attenuator (VVA) designed for a multitude of .

F2250NLGK - Voltage Variable RF Attenuator (Renesas)
Voltage Variable RF Attenuator GENERAL DESCRIPTION The F2250 is a low insertion loss Voltage Variable RF Attenuator (VVA) designed for a multitude of .

F2250NLGK - Voltage Variable RF Attenuator (IDT)
Voltage Variable RF Attenuator GENERAL DESCRIPTION The F2250 is a low insertion loss Voltage Variable RF Attenuator (VVA) designed for a multitude of .