Part number:
F2202
Manufacturer:
Polyfet RF Devices
File Size:
37.31 KB
Description:
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
| Image | Manufacturer | B2B MPN | Description | Distributor | Stock | Quantity | Price | Buy Now |
|---|---|---|---|---|---|---|---|---|
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Panasonic Electronic Components | ERJ-H2RF2202X | RES 22K OHM 1% 1/10W 0402 | DigiKey | 13617 | 5000 units |
$0.04
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F2202
Polyfet RF Devices
37.31 KB
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2202 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 4 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R
📁 Related Datasheet
F2201 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2211 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
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General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2212 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2213 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
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General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2246 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F2247 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
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