Part number:
F2211
Manufacturer:
Polyfet RF Devices
File Size:
35.91 KB
Description:
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
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Panasonic Electronic Components | ERJ-2RKF2211X | RES SMD 2.21K OHM 1% 1/10W 0402 | DigiKey | 260000 | 1000000 units |
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F2211
Polyfet RF Devices
35.91 KB
Patented gold metalized silicon gate enhancement mode rf power vdmos transistor.
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F2211 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 15 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R
📁 Related Datasheet
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F2213 - PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
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