L125 Datasheet, Transistor, Polyfet RF Devices

✔ L125 Features

low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRA

✔ L125 Application

Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Drive

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Part number:

L125

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Polyfet RF Devices

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38.43kb

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📄 Datasheet

Description:

Silicon gate enhancement mode rf power ldmos transistor. Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Pa

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Stock and price

Sumida Corporation

FIXED IND 10UH 5.3A 25 MOHM SMD

DigiKey

CDRH125L125NP-100MC

500 In Stock

Qty : 12500 units

Unit Price : $0.46

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L125 SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices