L125 Datasheet - Polyfet RF Devices

L125, SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

polyfet rf devices L125 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

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Datasheet Details

Part number:

L125

Manufacturer:

Polyfet RF Devices

File Size:

38.43 KB

Description:

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style SO8 -1 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T

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L125 SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices

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