Part number:
L125
Manufacturer:
Polyfet RF Devices
File Size:
38.43 KB
Description:
Silicon gate enhancement mode rf power ldmos transistor.
Datasheet Details
L125 Features
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style SO8 -1 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T
Datasheet Details
L125
Polyfet RF Devices
38.43 KB
Silicon gate enhancement mode rf power ldmos transistor.
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