Part number:
L125
Manufacturer:
Polyfet RF Devices
File Size:
38.43 KB
Description:
Silicon gate enhancement mode rf power ldmos transistor.
Datasheet Details
Datasheet Details
Part number:
L125
Manufacturer:
Polyfet RF Devices
File Size:
38.43 KB
Description:
Silicon gate enhancement mode rf power ldmos transistor.
L125, SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
L125 Features
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style SO8 -1 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T
📁 Related Datasheet
📌 All Tags