Datasheet Details
- Part number
- L125
- Manufacturer
- Polyfet RF Devices
- File Size
- 38.43 KB
- Datasheet
- L125_PolyfetRFDevices.pdf
- Description
- SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
L125 Description
polyfet rf devices L125 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
L125 Features
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 15.0 Watts Single Ended Package Style SO8 -1 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS ( T
📁 Related Datasheet
📌 All Tags