Part number:
LC801
Manufacturer:
Polyfet RF Devices
File Size:
37.48 KB
Description:
Silicon gate enhancement mode rf power ldmos transistor.
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 20.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25
LC801
Polyfet RF Devices
37.48 KB
Silicon gate enhancement mode rf power ldmos transistor.
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