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LC801 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LC801 Description

polyfet rf devices LC801 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

LC801 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 20.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

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Datasheet Details

Part number
LC801
Manufacturer
Polyfet RF Devices
File Size
37.48 KB
Datasheet
LC801_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices
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