LC821 Datasheet - Polyfet RF Devices

LC821, SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

polyfet rf devices LC821 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

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LC821_PolyfetRFDevices.pdf

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Datasheet Details

Part number:

LC821

Manufacturer:

Polyfet RF Devices

File Size:

37.29 KB

Description:

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 8.0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

LC821 Distributors

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