SA741 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
SA741 Features
* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 35.0 Watts Single Ended Package Style AA HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25
