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SA741 - SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SA741 Description

polyfet rf devices SA741 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

SA741 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 35.0 Watts Single Ended Package Style AA HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

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Datasheet Details

Part number
SA741
Manufacturer
Polyfet RF Devices
File Size
36.61 KB
Datasheet
SA741_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices
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