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F1001 RF POWER VDMOS TRANSISTOR

F1001 Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

F1001 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance F1001 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 20 Watts Single Ended Package Style AA HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RAT

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Datasheet Details

Part number
F1001
Manufacturer
Polyfet RF Devices
File Size
37.37 KB
Datasheet
F1001_PolyfetRFDevices.pdf
Description
RF POWER VDMOS TRANSISTOR

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POWER VDMOS TRANSISTOR Polyfet RF Devices
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