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F1006 RF POWER VDMOS TRANSISTOR

F1006 Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

F1006 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1006 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 120 Watts Single Ended Package Style AV HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM

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Datasheet Details

Part number
F1006
Manufacturer
Polyfet RF Devices
File Size
37.66 KB
Datasheet
F1006_PolyfetRFDevices.pdf
Description
RF POWER VDMOS TRANSISTOR

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POWER VDMOS TRANSISTOR Polyfet RF Devices
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