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F1081 - RF POWER VDMOS TRANSISTOR

F1081 Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

F1081 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 350 Watts Junction to Case Thermal Resistance 0.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1081 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT

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Datasheet Details

Part number
F1081
Manufacturer
Polyfet RF Devices
File Size
40.28 KB
Datasheet
F1081_PolyfetRFDevices.pdf
Description
RF POWER VDMOS TRANSISTOR

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POWER VDMOS TRANSISTOR Polyfet RF Devices
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