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LP821 - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

LP821 Description

polyfet rf devices LP821 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

LP821 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 10.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

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Datasheet Details

Part number
LP821
Manufacturer
Polyfet RF Devices
File Size
35.69 KB
Datasheet
LP821_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER LDMOS TRANSISTOR Polyfet RF Devices
Polyfet RF Devices LP821-like datasheet