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SP741 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SP741 Description

polyfet rf devices SP741 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

SP741 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 25.0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25

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Datasheet Details

Part number
SP741
Manufacturer
Polyfet RF Devices
File Size
35.55 KB
Datasheet
SP741_PolyfetRFDevices.pdf
Description
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices
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