Part number:
PDB2216S
Manufacturer:
Potens semiconductor
File Size:
717.23 KB
Description:
Dual n-channel mosfet.
PDB2216S-Potenssemiconductor.pdf
Datasheet Details
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod
PDB2216S Features
* Fast switching
* Green Device Available
* Suit for 1.8V Gate Drive Applications Applications
* Notebook
* Load Switch
* Networking
* Hand-held Instruments S1 S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-S
PDB2216S-Potenssemiconductor.pdf
Datasheet Details
PDB2216S
Potens semiconductor
717.23 KB
Dual n-channel mosfet.
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