PDB2216S Datasheet - Potens semiconductor

PDB2216S Dual N-Channel MOSFET

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mod.

PDB2216S Features

* Fast switching

* Green Device Available

* Suit for 1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Networking

* Hand-held Instruments S1 S2 Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-S

PDB2216S-Potenssemiconductor.pdf

PDB2216S Datasheet Preview — Preview of PDB2216S PDF

Datasheet Details

Part number:

PDB2216S

Manufacturer:

Potens semiconductor

File Size:

717.23 KB

Description:

Dual n-channel mosfet.

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PDB2216S PDB2216S Dual N-Channel MOSFET Potens semiconductor

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