PDB2309L Datasheet | Potens semiconductor

20V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. DFN2x2-6L 2EP Pin Configuration DD G DD S S SDD GD D BVDSS -20V RDSON 28m ID -8.5A Features - -20V,-8.5A, RDS(ON) =28mΩ@VGS = -4.5V - Improved dv/dt capability - Fast switching - Green Device Available - Suit for -1.8V Gate Drive Applications Applications - Notebook - Load Switch - Battery Protection - Ha Gnd-held Instruments -...