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PDB2309L - P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -20V,-8.5A, RDS(ON) =28mΩ@VGS = -4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for -1.8V Gate Drive.

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Datasheet Details

Part number PDB2309L
Manufacturer Potens semiconductor
File Size 464.77 KB
Description P-Channel MOSFET
Datasheet download datasheet PDB2309L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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20V P-Channel MOSFETs PDB2309L General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. DFN2x2-6L 2EP Pin Configuration DD G DD S S SDD D GD D G D S BVDSS -20V RDSON 28m ID -8.5A Features  -20V,-8.5A, RDS(ON) =28mΩ@VGS = -4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for -1.