PDB2116M Datasheet | Potens semiconductor

20V N+P Dual Channel MOSFETs General Description These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40m 90m 3.8A -2.5A provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. DFN2X3 Dual Pin Configuration D1 D1 D2 D2 D1 G1 G S1 G1 S2 G2 S1 G2 D2 S2 Features - Fast switching - Green Device Available - Suit for 1.8V Gate Drive Applications Applications - Notebook - Load Switch - Networking - Hand-held...