PDB2116M Description
These N+P dual Channel enhancement mode power BVDSS RDSON ID field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, 20V -20V 40m 90m 3.8A -2.5A provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching...
PDB2116M Key Features
- Fast switching
- Green Device Available
- Suit for 1.8V Gate Drive