PDB2216S Datasheet | Potens semiconductor

20V Dual N-Channel MOSFETs General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. DFN2X2 Dual 2EP Pin Configuration ˙ S1 G1 D2 D1 G2 S2 D1 G1 G2 D2 BVDSS 20V RDSON 40m ID 5.2A Features - Fast switching - Green Device Available - Suit for 1.8V Gate Drive Applications Applications - Notebook - Load Switch - Networking - Hand-held Instruments S1...