PDB0854S Datasheet | Potens semiconductor

100V Dual N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. BVDSS 100V RDSON 390m ID 1.2A Features - 100V,1.2A, RDS(ON) =390mΩ @VGS = 10V - Improved dv/dt capability - Fast switching - Green Device Available DFN2X2 Dual 2EP Pin Configuration D1 G2 ˙ S2 S1 G1 D2 D1 G1 G2 S1 Applications D2 - Networking - Load Switch - LED applications S2...