PDB2116S
PDB2116S is N+P Dual Channel MOSFET manufactured by Potens semiconductor.
20V N+P Dual Channel MOSFETs
General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
DFN2X2 Dual 2EP Pin Configuration
BVDSS 20V -20V
RDSON 40m 100m
ID 3.8A -2.5A
Features
- Fast switching
- Green Device Available
- Suit for 1.8V Gate Drive Applications
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S1 G1 D2
D1 G2 S2
D1
G1
G2
D2
App- lic Naotteiobonosk
- Load Switch
- Networking
- Hand-held Instruments
S1...
