PDEU69A8Y Datasheet (Potens semiconductor)

PDEU69A8Y, N-Channel MOSFETs

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

PDEU69A8Y Features

* 60V,300mA, RDS(ON) =3Ω@VGS = 10V

* Improved dv/dt capability

* Fast switching

* Green Device Available D S G G S Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VD