PDEU69A8Z Datasheet, Mosfets, Potens semiconductor

PDEU69A8Z Features

• Mosfets
• 60V,300mA, RDS(ON) =3Ω@VGS = 10V
• Improved dv/dt capability
• Fast switching
• ESD protected up to 2KV
• Green Device Available D S G G S

PDF File Details

Part number:

PDEU69A8Z

Manufacturer:

Potens semiconductor

File Size:

622.66kb

Download:

📄 Datasheet

Description:

N-channel mosfets. These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e

PDEU69A8Z Application

• Applications SOT323 Pin Configuration D BVDSS 60V RDSON 3 ID 300mA Features
• 60V,300mA, RDS(ON) =3Ω@VGS = 10V
• Improved dv

TAGS

PDEU69A8Z

Potens semiconductor

📁 Related Datasheet

PDEU69A8Y - N-Channel MOSFETs (Potens semiconductor)
60V N-Channel MOSFETs PDEU69A8Y General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDEU2319W - P-Channel MOSFETs (Potens semiconductor)
20V P-Channel MOSFETs General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adva.

PDEU2319X - P-Channel MOSFETs (Potens semiconductor)
20V P-Channel MOSFETs PDEU2319X General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDEU2319Y - P-Channel MOSFETs (Potens semiconductor)
20V P-Channel MOSFETs PDEU2319Y General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDEU2319Z - P-Channel MOSFETs (Potens semiconductor)
20V P-Channel MOSFETs PDEU2319Z General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDEU2320W - N-Channel MOSFETs (Potens semiconductor)
20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adva.

PDEU2320X - N-Channel MOSFETs (Potens semiconductor)
20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This adva.

PDEU2320Y - N-Channel MOSFETs (Potens semiconductor)
20V N-Channel MOSFETs PDEU2320Y General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDEU2320Z - N-Channel MOSFETs (Potens semiconductor)
20V N-Channel MOSFETs PDEU2320Z General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDEB2310Y - N-Channel MOSFET (Potens semiconductor)
20V N-Channel MOSFETs General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advan.