PDEB2310Y N-Channel MOSFET

Potens semiconductor

PDEB2310Y Description

20V N-Channel MOSFETs General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDEB2310Y Features

* 20V,11A, RDS(ON) =10mΩ @VGS = 10V
* Improved dv/dt capability
* ESD Protection Diode Embedded

Datasheet Details

📁 Related Datasheet

📌 All Tags

Potens semiconductor PDEB2310Y-like datasheet