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PDH3960 N-Channel MOSFETs

PDH3960 Description

30V N-Channel MOSFETs PDH3960 General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDH3960 Features

* 30V, 176A, RDS(ON) =3mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* 100% EAS Guaranteed

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Datasheet Details

Part number
PDH3960
Manufacturer
Potens semiconductor
File Size
399.69 KB
Datasheet
PDH3960-Potenssemiconductor.pdf
Description
N-Channel MOSFETs

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N-Channel MOSFETs Potens semiconductor
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