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PDH4960 N-Channel MOSFETs

PDH4960 Description

40V N-Channel MOSFETs PDH4960 General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDH4960 Features

* 40V, 150A, RDS(ON) =3.8mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching

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Datasheet Details

Part number
PDH4960
Manufacturer
Potens semiconductor
File Size
398.73 KB
Datasheet
PDH4960-Potenssemiconductor.pdf
Description
N-Channel MOSFETs

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N-Channel MOSFETs Potens semiconductor
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