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PDN2312S N-Channel MOSFETs

PDN2312S Description

20V N-Channel MOSFETs PDN2312S General .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

PDN2312S Features

* 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available

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Datasheet Details

Part number
PDN2312S
Manufacturer
Potens semiconductor
File Size
403.85 KB
Datasheet
PDN2312S-Potenssemiconductor.pdf
Description
N-Channel MOSFETs

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N-Channel MOSFETs Potens semiconductor
Potens semiconductor PDN2312S-like datasheet