LSIPD-A75 Datasheet, photodiode, Q-BAIHE

LSIPD-A75 Features

• Photodiode
• High reliability, low dark current
• 800-1700nm spectral range
• -3dB Bandwidth up to 2.5GHz
• HermeticTO46 Can or with receptacle or fiber coupling

PDF File Details

Part number:

LSIPD-A75

Manufacturer:

Q-BAIHE

File Size:

259.55kb

Download:

📄 Datasheet

Description:

Analog ingaas pin photodiode. Bottom View Note: For more information on dimension, please contact us. Type B PIN description Bottom View Order information LSIPD

LSIPD-A75 Application

• Applications
• Analog CATV and Fiber communication
• Fast optical pulse testing
• OTDR, Optical sensor
• Industrial

TAGS

LSIPD-A75

Q-BAIHE

📁 Related Datasheet

LSIPD-A40 - Analog InGaAs PIN photodiode (Q-BAIHE)
40um 6GHz Analog InGaAs PIN photodiode V4.1HIPD-001 20-10-01 Model: LSIPD-A40 Features:  High reliability, low dark current  800-1700nm spectral ra.

LSIPD-L1 - InGaAs PIN photodiode (Q-BAIHE)
1mm InGaAs PIN photodiode Model: LSIPD-L1 Features:  High reliability, low dark current  Top illumination Planar PIN PD  Active diameter 1mm  TO4.

LSIPD-LD50 - Ultra low dark current Analog InGaAs PIN photodiode (Q-BAIHE)
50um Ultra low dark current Analog InGaAs PIN photodiode V4.1HIPD-002 20-10-01 Model: LSIPD-LD50 Features:  High reliability, Ultra low dark curre.

LSIPD-UL0.3 - PIN photodiode (Q-BAIHE)
0.3mm low dark current Analog InGaAs PIN photodiode V4.1LIPD-003 20-10-01 Model: LSIPD-UL0.3 Features:  High reliability, Ultra low dark current  .

LSIPD22-0.5 - InGaAs PIN Photodiode (Q-BAIHE)
800-2200nm 0.5mm InGaAs PIN Photodiode V4.1LWPD-010 21-10-01 Model: LSIPD22-0.5 Features:  Low noise, High reliability  800-2200nm wide wavelengt.

LSI1012LT1G - N-Channel 1.8-V (G-S) MOSFET (LRC)
LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Si.

LSI1012N3T5G - N-Channel 1.8-V (G-S) MOSFET (LRC)
N-Channel 1.8-V (G-S) MOSFET FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resis.

LSI1012XT1G - N-Channel 1.8-V (G-S) MOSFET (LRC)
LESHAN RADIO COMPANY, LTD. N-Channel 1.8-V (G-S) MOSFET LSI1012XT1G S-LSI1012XT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD.

LSI1013LT1G - P-Channel 1.8-V (G-S) MOSFET (LRC)
LESHAN RADIO COMPANY, LTD. P-Channel 1.8-V (G-S) MOSFET LSI1013LT1G S-LSI1013LT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD.

LSI1013XT1G - P-Channel 1.8-V (G-S) MOSFET (LRC)
P-Channel 1.8-V (G-S) MOSFET LESHAN RADIO COMPANY, LTD. LSI1013XT1G S-LSI1013XT1G FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD .