LSIPD22-0.5
Q-BAIHE
261.28kb
Ingaas pin photodiode. Bottom View Note:For more information on dimension, please contact us. C Type PIN description Bottom View Order information LSIPD2
TAGS
📁 Related Datasheet
LSIPD-A40 - Analog InGaAs PIN photodiode
(Q-BAIHE)
40um 6GHz Analog InGaAs PIN photodiode V4.1HIPD-001 20-10-01
Model: LSIPD-A40
Features: High reliability, low dark current 800-1700nm spectral ra.
LSIPD-A75 - Analog InGaAs PIN photodiode
(Q-BAIHE)
75um 2.5GHz Analog InGaAs PIN photodiode
V4.1HIPD-003 20-10-01
Model: LSIPD-A75
Features: High reliability, low dark current 800-1700nm spectral.
LSIPD-L1 - InGaAs PIN photodiode
(Q-BAIHE)
1mm InGaAs PIN photodiode
Model: LSIPD-L1
Features:
High reliability, low dark current Top illumination Planar PIN PD Active diameter 1mm TO4.
LSIPD-LD50 - Ultra low dark current Analog InGaAs PIN photodiode
(Q-BAIHE)
50um Ultra low dark current Analog InGaAs PIN photodiode V4.1HIPD-002 20-10-01
Model: LSIPD-LD50
Features:
High reliability, Ultra low dark curre.
LSIPD-UL0.3 - PIN photodiode
(Q-BAIHE)
0.3mm low dark current Analog InGaAs PIN photodiode V4.1LIPD-003 20-10-01
Model: LSIPD-UL0.3
Features: High reliability, Ultra low dark current .
LSI1012LT1G - N-Channel 1.8-V (G-S) MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
N-Channel 1.8-V (G-S) MOSFET
FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Si.
LSI1012N3T5G - N-Channel 1.8-V (G-S) MOSFET
(LRC)
N-Channel 1.8-V (G-S) MOSFET
FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resis.
LSI1012XT1G - N-Channel 1.8-V (G-S) MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
N-Channel 1.8-V (G-S) MOSFET
LSI1012XT1G S-LSI1012XT1G
FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD.
LSI1013LT1G - P-Channel 1.8-V (G-S) MOSFET
(LRC)
LESHAN RADIO COMPANY, LTD.
P-Channel 1.8-V (G-S) MOSFET
LSI1013LT1G S-LSI1013LT1G
FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD.
LSI1013XT1G - P-Channel 1.8-V (G-S) MOSFET
(LRC)
P-Channel 1.8-V (G-S) MOSFET
LESHAN RADIO COMPANY, LTD.
LSI1013XT1G S-LSI1013XT1G
FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD .