QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :.
Model : QL65E7S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65E7S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd.
Ver.
0 JAN.
2004 OVERVIEW QL65E7S-A/B/C is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure.
It's an attractive light source, with a typical
