QL65E7S-B, QL65E7S-A Datasheet - QSI

QL65E7S-B LASER DIODE

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :. Model : QL65E7S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65E7S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 0 JAN. 2004 OVERVIEW QL65E7S-A/B/C is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical.

QL65E7S-B Features

* - Visible Light Output : λp = 650 nm - Optical Power Output : 7mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode

* ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode

QL65E7S-A-QSI.pdf