QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer :.
Model : QL65E7S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65E7S-A/B/C InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd.
Ver.
0 JAN.
2004 OVERVIEW QL65E7S-A/B/C is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure.
It's an attractive light source, with a typical
QL65E7S-B Features
* - Visible Light Output : λp = 650 nm - Optical Power Output : 7mW CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode
* ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode
Datasheet Details
QL65E7S-B, QL65E7S-A
QSI
159.87 KB
Laser diode.
This datasheet PDF includes multiple part numbers: QL65E7S-B, QL65E7S-A.
Please refer to the document for exact specifications by model.
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