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QPA3055D - 100W S-Band GaN Power Amplifier

Description

Data Sheet Rev.

8 to +1 V Peak Drain Current (ID) 11.7 A Average Dra

Features

  • Frequency Range: 2.9 .
  •  3.6 GHz.
  • PSAT (PIN=25 dBm): > 50 dBm.
  • PAE (PIN=25 dBm): > 58 %.
  • Power Gain (PIN=25 dBm): > 25 dB.
  • Bias: VD = 30 V, IDQ = 300 mA, VG =.
  • 2.5 V typical.
  • Characterized at PW = 15 ms, DC = 30%, and PW = 100 us, DC = 10%.
  • Chip Dimensions: 4.890 x 4.890 x 0.100 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. 2 3 4 Applica.

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Datasheet Details

Part number QPA3055D
Manufacturer Qorvo
File Size 659.89 KB
Description 100W S-Band GaN Power Amplifier
Datasheet download datasheet QPA3055D Datasheet
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QPA3055D ® 100 W S-Band GaN Power Amplifier Product Overview Qorvo’s QPA3055D is a high-power, S-band amplifier fabricated on Qorvo’s production 0.25 um GaN on SiC process (QGaN25). Covering 2.9 – 3.6 GHz, the QPA3055D provides 100 W of saturated output power and 25 dB of large-signal gain while achieving 58% poweradded efficiency. The QPA3055D can also support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages and will perform well under both short and long pulse operations. The QPA3055D MMIC has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA3055D is ideal for both commercial and military radar systems. Lead-free and RoHS compliant.
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