* Excellent Linearity
* Extremely High Output Capability
* Voltage Controlled Attenuator
* Power Enable Feature
* Preamp Power Off Feature
* Low Distortion
* Optimal Reliability
* Low Noise
* Unconditionally Stable Under all Terminations
* 39dB Typical Gain at
RFCM5304 Datasheet (564.25 KB)
RFCM5304
RF Micro Devices
564.25 KB
Integrated amplifier.
RFCM5304
5-220MHz SI-BJT INTEGRATED AMPLIFIER
The RFCM5304 is an Integrated Reverse Amplifier Module. The part employs Silicon die, a 20dB range vari.
📁 Related Datasheet
RFCM2680 POWER DOUBLER MODULE (RF Micro Devices)
RFCM3050 POWER DOUBLER MODULE (RF Micro Devices)
RFCM3080 GAN PUSH PULL MODULE (RF Micro Devices)
RFCM3316 POWER DOUBLER MODULE (RF Micro Devices)
RFCM3326 POWER DOUBLER MODULE (RF Micro Devices)
RFCM3328 GaAs/GaN Power Doubler Module (Qorvo)
RFCM4363 PUSH PULL MODULE (RF Micro Devices)
RFCM4363 GaAs/GaN Push Pull Module (Qorvo)
RFC02MM2S Super Fast Recovery Diode (ROHM)
RFC02MM2STF Super Fast Recovery Diode (ROHM)
