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SGC-6489Z

high performance SiGe HBT MMIC amplifier

SGC-6489Z Features

* Single Supply Operation: 5V at ID = 85mA

* No Dropping Resistor Required

* Patented Self Bias Circuitry

* Gain = 19.5dBm at 1950MHz

* P1dB = 19.2dBm at 1950MHz

* IP3 = 32.8dBm at 1950MHz

* Robust 1000V ESD, Class 1C HBM Applications

* PA Driver Amplifier

* Cellu

SGC-6489Z General Description

RFMD’s SGC-6489Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 5V supply, the SGC-6489Z does not require a .

SGC-6489Z Datasheet (220.35 KB)

Preview of SGC-6489Z PDF

Datasheet Details

Part number:

SGC-6489Z

Manufacturer:

RF Micro Devices

File Size:

220.35 KB

Description:

High performance sige hbt mmic amplifier.
NOT FOR NEW dB DESIGNS SGC-6489Z 50MHz to 3500MHz Silicon Germanium Active Bias Gain Block NOT FOR NEW DESIGNS SGC-6489Z 50MHz to 3500MHz SILICON GE.

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SGC-6489Z high performance SiGe HBT MMIC amplifier RF Micro Devices

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