SGL0163Z Datasheet - RF Micro Devices

SGL0163Z, high performance SiGe HBT MMIC amplifier

SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier SGL0163Z 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLI.
The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier featuring one-micron emitters with FT up to 50GHz.

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Datasheet Details

Part number:

SGL0163Z

Manufacturer:

RF Micro Devices

File Size:

411.58 KB

Description:

high performance SiGe HBT MMIC amplifier

Features

* Internally Matched to 50 800MHz to 1300MHz
* High Input/Output Intercept
* Low Noise Figure: 1.2dB Typ. at 900MHz
* Low Power Consumption
* Single Voltage Supply Opera- tion

Applications

* Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation from 800MHz to 1300MHz. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS
* SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT Temperature Compens

SGL0163Z Distributors

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SGL0163Z high performance SiGe HBT MMIC amplifier RF Micro Devices

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