FPD6836P70 - LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT

RFMD

FPD6836P70 Datasheet Preview — Preview of FPD6836P70 PDF

Datasheet Details

Part number	FPD6836P70
Manufacturer	RFMD
File Size	415.76 KB
Description	LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT
Datasheet	FPD6836P70-RFMD.pdf

FPD6836P70 Product details

Description

The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low-noise, high-frequency applications.

Features

22dBm Output Power (P1dB).
15dB Gain at 5.8GHz.
0.8dB Noise Figure at 5.8 GHz.
32dB Output IP3 at 5.8GHz.
45% Power-Added Efficiency at 5.8GHz.
Usable Gain to 18GHz.

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Published: May 23, 2016 |