FPD1050 Datasheet - Filtronic

FPD1050 - 0.75W POWER PHEMT

AND APPLICATIONS The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 µm by 1050 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performa.

FPD1050 Features

* 28.5 dBm Linear Output Power at 12 GHz

* 11 dB Power Gain at 12 GHz

* 14 dB Maximum Stable Gain at 12 GHz

* 41 dBm Output IP3

* 45% Power-Added Efficiency SOURCE BOND PAD (2x) DRAIN BOND PAD (2X) FPD1050 GATE BOND PAD (1X) DIE SIZE: 470 x 440 µm DIE THICKN

FPD1050_Filtronic.pdf