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FPD1050 - 0.75W POWER PHEMT

FPD1050 Description

0.75W POWER PHEMT * .
AND APPLICATIONS The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.

FPD1050 Features

* 28.5 dBm Linear Output Power at 12 GHz
* 11 dB Power Gain at 12 GHz
* 14 dB Maximum Stable Gain at 12 GHz
* 41 dBm Output IP3
* 45% Power-Added Efficiency SOURCE BOND PAD (2x) DRAIN BOND PAD (2X) FPD1050 GATE BOND PAD (1X) DIE SIZE: 470 x 440 µm DIE THICKN

FPD1050 Applications

* The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), featuring a 0.25 µm by 1050 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The epitaxia

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Datasheet Details

Part number
FPD1050
Manufacturer
Filtronic
File Size
180.59 KB
Datasheet
FPD1050_Filtronic.pdf
Description
0.75W POWER PHEMT

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0.75W POWER PHEMT Filtronic
Filtronic FPD1050-like datasheet