Datasheet Specifications
- Part number
- FPD3000SOT89
- Manufacturer
- Filtronic Compound Semiconductors
- File Size
- 422.75 KB
- Datasheet
- FPD3000SOT89_FiltronicCompoundSemiconductors.pdf
- Description
- HIGH LINEARITY PACKAGED PHEMT
Description
www.DataSheet4U.com LOW NOISE, HIGH LINEARITY PACKAGED PHEMT * PERFORMANCE (1850 MHz) * 30 dBm Output Power (P1dB) * 13 dB Sm.
Features
* c. co. uk/semis -1.0 S22 -0 .6 -2 .0 Swp Min 0.5GHz -5. -4 .0 0 -0. 2 -10.0 -3 . 0 0. 4 7 GHz 3. 0 0 4.Applications
* The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 x 3000 µm Schottky barrier Gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize pFPD3000SOT89 Distributors
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