FPD3000SOT89 - HIGH LINEARITY PACKAGED PHEMT
AND APPLICATIONS The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.25 x 3000 µm Schottky barrier Gate, defined by highresolution stepper-based photolithography.
The recessed and offset Gate structure minimizes parasit
FPD3000SOT89 Features
* c.co.uk/semis -1.0 S22 -0 .6 -2 .0 Swp Min 0.5GHz -5. -4 .0 0 -0. 2 -10.0 -3 . 0 0. 4 7 GHz 3. 0 0 4.
