FPD3000SOT89 Datasheet - Filtronic Compound Semiconductors

FPD3000SOT89 HIGH LINEARITY PACKAGED PHEMT

AND APPLICATIONS The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 x 3000 µm Schottky barrier Gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasit.

FPD3000SOT89 Features

* c.co.uk/semis -1.0 S22 -0 .6 -2 .0 Swp Min 0.5GHz -5. -4 .0 0 -0. 2 -10.0 -3 . 0 0. 4 7 GHz 3. 0 0 4.

FPD3000SOT89 Datasheet (422.75 KB)

FPD3000SOT89 Datasheet Preview — Preview of FPD3000SOT89 PDF

Datasheet Details

Part number:

FPD3000SOT89

Manufacturer:

Filtronic Compound Semiconductors

File Size:

422.75 KB

Description:

High linearity packaged phemt.

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FPD3000SOT89 HIGH LINEARITY PACKAGED PHEMT Filtronic Compound Semiconductors

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