FPD750P100

0.5W PACKAGED POWER PHEMT

Filtronic Compound Semiconductors

FPD750P100 Features

* 26.5 dBm Linear Output Power

* 18.5 dB Power Gain at 2 GHz

* 11.5 dB Maximum Stable Gain at 10 GHz

* 36 dBm Output IP3

* 45% Power-Added Efficiency at 2 GHz FPD750P100 www.DataSheet4U.com

* DESCRIPTION AND APPLICATIONS The FPD750P100 is a packag

FPD750P100 General Description

AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize.

FPD750P100 Datasheet (214.15 KB)

FPD750P100 Datasheet Preview — Preview of FPD750P100 PDF

Datasheet Details

Part number:

FPD750P100

Manufacturer:

Filtronic Compound Semiconductors

File Size:

214.15 KB

Description:

0.5w packaged power phemt.

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FPD750P100 0.5W PACKAGED POWER PHEMT Filtronic Compound Semiconductors

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FPD750P100 Features

FPD750P100 General Description

Datasheet Details

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Description:

FPD750P100 Distributor