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FPD750P100 Datasheet - Filtronic Compound Semiconductors

FPD750P100 0.5W PACKAGED POWER PHEMT

AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize.

FPD750P100_FiltronicCompoundSemiconductors.pdf

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Datasheet Details

Part number:

FPD750P100

Manufacturer:

Filtronic Compound Semiconductors

File Size:

214.15 KB

Description:

0.5w packaged power phemt.

FPD750P100 Distributor

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FPD750P100 FPD750P100 0.5W PACKAGED POWER PHEMT Filtronic Compound Semiconductors