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FPD750P100 - 0.5W PACKAGED POWER PHEMT

FPD750P100 Description

0.5W PACKAGED POWER PHEMT * .
AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.

FPD750P100 Features

* 26.5 dBm Linear Output Power
* 18.5 dB Power Gain at 2 GHz
* 11.5 dB Maximum Stable Gain at 10 GHz
* 36 dBm Output IP3
* 45% Power-Added Efficiency at 2 GHz FPD750P100 www. DataSheet4U. com

FPD750P100 Applications

* The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. The

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0.5W PACKAGED POWER PHEMT Filtronic Compound Semiconductors
Filtronic Compound Semiconductors FPD750P100-like datasheet