FPD750P100 - 0.5W PACKAGED POWER PHEMT
AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepperbased photolithography.
The recessed and offset Gate structure minimizes parasitics to optimize
