FPD750P100 - 0.5W PACKAGED POWER PHEMT

Product Overview

Filtronic Compound Semiconductors

Datasheet Details

Part number	FPD750P100
Manufacturer	Filtronic Compound Semiconductors
File Size	214.15 KB
Description	0.5W PACKAGED POWER PHEMT
Datasheet	FPD750P100 Datasheet
Additional preview pages of the FPD750P100 datasheet.

Product details

Description

AND APPLICATIONS The FPD750P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 750 µm Schottky barrier gate, defined by high-resolution stepperbased photolithography.The recessed and offset Gate structure minimizes parasitics to optimize performance.The epitaxial structure and processing have been optimized for reliable high-power applications.The FPD750P100 also

Features

S.
26.5 dBm Linear Output Power.
18.5 dB Power Gain at 2 GHz.
11.5 dB Maximum Stable Gain at 10 GHz.
36 dBm Output IP3.
45% Power-Added Efficiency at 2 GHz FPD750P100 www. DataSheet4U. com.

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Published: Oct 25, 2008 |