FPD750SOT343 - LOW NOISE HIGH LINEARITY PACKAGED PHEMT
The www.DataSheet4U.com FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.25 µm x 750 µm Schottky barrier Gate.
The Filtronic 0.25µm process ensures class-leading noise performance.
The use of a small footprint plastic package allows
