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FPD750SOT89 Datasheet - Filtronic Compound Semiconductors

FPD750SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT

The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The double recessed gate structure minimizes parasitics to optimize per.

FPD750SOT89 Features

* (1.85GHZ):

* Datasheet 3.0 PACKAGE: RoHS 25 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant (Directive 2002/95/EC) 9 www.DataSheet4U.com

FPD750SOT89 Datasheet (1.00 MB)

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Datasheet Details

Part number:

FPD750SOT89

Manufacturer:

Filtronic Compound Semiconductors

File Size:

1.00 MB

Description:

Low noise high linearity packaged phemt.

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FPD750SOT89 LOW NOISE HIGH LINEARITY PACKAGED PHEMT Filtronic Compound Semiconductors

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