FPD750SOT89 - LOW NOISE HIGH LINEARITY PACKAGED PHEMT
The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography.
The double recessed gate structure minimizes parasitics to optimize per
FPD750SOT89 Features
* (1.85GHZ):
* Datasheet 3.0 PACKAGE: RoHS 25 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant (Directive 2002/95/EC) 9 www.DataSheet4U.com
