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FPD7612 Datasheet - Filtronic Compound Semiconductors

FPD7612 GENERAL PURPOSE PHEMT

The www.DataSheet4U.com FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 200 µm Schottky barrier gate, defined by high -resolution stepper-based photolithography. The recessed gate structure minimizes parasitics to optimize performance. The.

FPD7612_FiltronicCompoundSemiconductors.pdf

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Datasheet Details

Part number:

FPD7612

Manufacturer:

Filtronic Compound Semiconductors

File Size:

315.60 KB

Description:

General purpose phemt.

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FPD7612 FPD7612 GENERAL PURPOSE PHEMT Filtronic Compound Semiconductors

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