FPD7612 - GENERAL PURPOSE PHEMT
The www.DataSheet4U.com FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 200 µm Schottky barrier gate, defined by high -resolution stepper-based photolithography.
The recessed gate structure minimizes parasitics to optimize performance.
The
