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FPD1000V - 1W POWER PHEMT

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Part number FPD1000V
Manufacturer Filtronic
File Size 200.99 KB
Description 1W POWER PHEMT
Datasheet download datasheet FPD1000V Datasheet
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Description

AND APPLICATIONS DIE SIZE (µm): 650 x 800 DIE THICKNESS: 75µm BONDING PADS (µm): >70 x 65 The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands.The FPD1000V includes Source plated thru-vias, and does not require wire bonds to the Source.Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL

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