Datasheet Specifications
- Part number
- FPD1000V
- Manufacturer
- Filtronic
- File Size
- 200.99 KB
- Datasheet
- FPD1000V_Filtronic.pdf
- Description
- 1W POWER PHEMT
Description
PRELIMINARY * .Features
* (1.8 GHz)Applications
* DIE SIZE (µm): 650 x 800 DIE THICKNESS: 75µm BONDING PADS (µm): >70 x 65 The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD1000V includes Source plated thru-vias, and does notFPD1000V Distributors
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