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FPD1000V - 1W POWER PHEMT

FPD1000V Description

PRELIMINARY * .
AND APPLICATIONS DIE SIZE (µm): 650 x 800 DIE THICKNESS: 75µm BONDING PADS (µm): >70 x 65 The FPD1000V is a discrete depletion mode AlGaAs/InGaAs ps.

FPD1000V Features

* (1.8 GHz)
* 31 dBm Linear Output Power
* 16 dB Power Gain
* Useable Gain to 10 GHz
* 41 dBm Output IP3
* Maximum Stable Gain of 20 dB
* 50% Power-Added Efficiency
* 10V Operation / Plated Source Thru-Vias DRAIN BOND PAD (2X) FPD1000V 1W POWER

FPD1000V Applications

* DIE SIZE (µm): 650 x 800 DIE THICKNESS: 75µm BONDING PADS (µm): >70 x 65 The FPD1000V is a discrete depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L- and C-Bands. The FPD1000V includes Source plated thru-vias, and does not

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Datasheet Details

Part number
FPD1000V
Manufacturer
Filtronic
File Size
200.99 KB
Datasheet
FPD1000V_Filtronic.pdf
Description
1W POWER PHEMT

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POWER PHEMT Filtronic
Filtronic FPD1000V-like datasheet