FPD3000P100

2W PACKAGED POWER PHEMT

Filtronic Compound Semiconductors

FPD3000P100 Features

* 32.5 dBm Linear Output Power

* 17 dB Power Gain at 2 GHz

* 9.5 dB Maximum Stable Gain at 10 GHz

* 42 dBm Output IP3

* 45% Power-Added Efficiency at 2 GHz FPD3000P100

* DESCRIPTION AND APPLICATIONS The FPD3000P100 is a packaged AlGaAs/InGaAs pseudo

FPD3000P100 General Description

AND APPLICATIONS The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimiz.

FPD3000P100 Datasheet (212.32 KB)

FPD3000P100 Datasheet Preview — Preview of FPD3000P100 PDF

Datasheet Details

Part number:

FPD3000P100

Manufacturer:

Filtronic Compound Semiconductors

File Size:

212.32 KB

Description:

2w packaged power phemt.

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FPD3000P100 PACKAGED POWER PHEMT Filtronic Compound Semiconductors

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FPD3000P100 Features

FPD3000P100 General Description

Datasheet Details

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FPD3000P100 Distributor