FPD3000P100 2W PACKAGED POWER PHEMT

Filtronic Compound Semiconductors

Description

www.DataSheet4U.com 2W PACKAGED POWER PHEMT * .
AND APPLICATIONS The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.

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Datasheet Specifications

Part number: FPD3000P100
Manufacturer: Filtronic Compound Semiconductors
File Size: 212.32 KB
Datasheet: FPD3000P100_FiltronicCompoundSemiconductors.pdf
Description: 2W PACKAGED POWER PHEMT

Features

* 32.5 dBm Linear Output Power
* 17 dB Power Gain at 2 GHz
* 9.5 dB Maximum Stable Gain at 10 GHz
* 42 dBm Output IP3
* 45% Power-Added Efficiency at 2 GHz FPD3000P100

Applications

* The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. Th

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FPD3000P100 PACKAGED POWER PHEMT Filtronic Compound Semiconductors

Filtronic Compound Semiconductors FPD3000P100-like datasheet