FPD3000P100 Datasheet - Filtronic Compound Semiconductors

2W PACKAGED POWER PHEMT

FPD3000P100 General Description

AND APPLICATIONS The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimiz.

FPD3000P100 Datasheet (212.32 KB)

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FPD3000P100

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Filtronic Compound Semiconductors

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212.32 KB

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2w packaged power phemt.

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FPD3000P100 PACKAGED POWER PHEMT Filtronic Compound Semiconductors

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FPD3000P100 General Description

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