FPD3000P100 - 2W PACKAGED POWER PHEMT
AND APPLICATIONS The FPD3000P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by highresolution stepper-based photolithography.
The recessed and offset Gate structure minimizes parasitics to optimiz
