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FPD3000 2W POWER PHEMT

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Description

www.DataSheet4U.com 2W POWER PHEMT * .
AND APPLICATIONS DIE SIZE (µm): 830 x 470 DIE THICKNESS: 75 µm BONDING PADS (µm): >75 x 60 The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electr.

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Preview of FPD3000 PDF
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Features

* 32.5 dBm Linear Output Power at 12 GHz
* 6.5 dB Power Gain at 12 GHz
* 8 dB Maximum Stable Gain at 12 GHz
* 42 dBm Output IP3
* 30% Power-Added Efficiency DRAIN BOND PAD (4X) SOURCE BOND PAD (2x) FPD3000 GATE BOND PAD (4X)

Applications

* DIE SIZE (µm): 830 x 470 DIE THICKNESS: 75 µm BONDING PADS (µm): >75 x 60 The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offse

FPD3000 Distributors

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📌 All Tags

POWER PHEMT Filtronic Compound Semiconductors
Filtronic Compound Semiconductors FPD3000-like datasheet