Datasheet Specifications
- Part number
- FPD3000
- Manufacturer
- Filtronic Compound Semiconductors
- File Size
- 213.66 KB
- Datasheet
- FPD3000_FiltronicCompoundSemiconductors.pdf
- Description
- 2W POWER PHEMT
Description
www.DataSheet4U.com 2W POWER PHEMT * .Features
* 32.5 dBm Linear Output Power at 12 GHzApplications
* DIE SIZE (µm): 830 x 470 DIE THICKNESS: 75 µm BONDING PADS (µm): >75 x 60 The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offseFPD3000 Distributors
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