FPD3000 - 2W POWER PHEMT
AND APPLICATIONS DIE SIZE (µm): 830 x 470 DIE THICKNESS: 75 µm BONDING PADS (µm): >75 x 60 The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
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