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FPD3000 Datasheet - Filtronic Compound Semiconductors

FPD3000 - 2W POWER PHEMT

AND APPLICATIONS DIE SIZE (µm): 830 x 470 DIE THICKNESS: 75 µm BONDING PADS (µm): >75 x 60 The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 3000 µm Schottky barrier gate, defined by high-resolution stepper-based photolithography.

The r

FPD3000_FiltronicCompoundSemiconductors.pdf

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Datasheet Details

Part number:

FPD3000

Manufacturer:

Filtronic Compound Semiconductors

File Size:

213.66 KB

Description:

2w power phemt.

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