FPD750DFN Datasheet, Phemt, Filtronic Compound Semiconductors

FPD750DFN Features

• Phemt (1850MHZ):
• 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Pow

PDF File Details

Part number:

FPD750DFN

Manufacturer:

Filtronic Compound Semiconductors

File Size:

610.11kb

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📄 Datasheet

Description:

Low noise high linearity packaged phemt. The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.2

FPD750DFN Application

• Applications
• Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs W

TAGS

FPD750DFN

Filtronic Compound Semiconductors

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