FPD750DFN - LOW NOISE HIGH LINEARITY PACKAGED PHEMT
The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).
It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography.
The recessed and offset Gate structure minimizes parasitics to optimize
FPD750DFN Features
* (1850MHZ):
* 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added Efficiency RoHS compliant Datasheet v3.0 PACKAGE: RoHS 9 TYPICAL APPLICATIONS:
