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FPD750DFN Datasheet - Filtronic Compound Semiconductors

FPD750DFN LOW NOISE HIGH LINEARITY PACKAGED PHEMT

The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 750 µm Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize .

FPD750DFN Features

* (1850MHZ):

* 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added Efficiency RoHS compliant Datasheet v3.0 PACKAGE: RoHS 9 TYPICAL APPLICATIONS:

FPD750DFN_FiltronicCompoundSemiconductors.pdf

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Datasheet Details

Part number:

FPD750DFN

Manufacturer:

Filtronic Compound Semiconductors

File Size:

610.11 KB

Description:

Low noise high linearity packaged phemt.

FPD750DFN Distributor

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FPD750DFN FPD750DFN LOW NOISE HIGH LINEARITY PACKAGED PHEMT Filtronic Compound Semiconductors