FPD1500P100 1W PACKAGED POWER PHEMT

Filtronic

Description

1W PACKAGED POWER PHEMT * .
AND APPLICATIONS The FPD1500P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.

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Datasheet Specifications

Part number: FPD1500P100
Manufacturer: Filtronic
File Size: 186.12 KB
Datasheet: FPD1500P100_Filtronic.pdf
Description: 1W PACKAGED POWER PHEMT

Features

* 29.5 dBm Linear Output Power
* 18 dB Power Gain at 2 GHz
* 10.5 dB Maximum Stable Gain at 10 GHz
* 39 dBm Output IP3
* 45% Power-Added Efficiency at 2 GHz FPD1500P100

Applications

* The FPD1500P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 µm by 1500 µm Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance. Th

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FPD1500P100 PACKAGED POWER PHEMT Filtronic

Filtronic FPD1500P100-like datasheet